data sheet low voltage advance barrier rectifier ABR1045 may 2013 rev. 1. 1 bcd semiconductor manufacturing limited 1 general description low voltage advance barrier rectifier is suited for switch mode power supplies and other power converters. this device is intended for use in low voltage operation, and particularly, in high frequency circuits where low switching losses and low noise are required. the ABR1045 is availabl e in pdfn-56-8 and to-277 packages. features ? ultra low forward voltage ? high surge capacity ? high operating junction temperature ? pb-free package is available ? low thermal resistance main product characteristics i f(av) 10a v rrm 45v t j(max) 150 ? c v f (max) (t c =25 ? c) 0.47v mechanical characteristics ? case: epoxy, molded ? epoxy meets ul 94 v-0@ 0.125in. ? weight (approximately): 0.09 grams (pdfn-56-8 package) 0.0965 grams (to-277 package) ? finish: all extern al surfaces corrosion resistant and terminal ? leads are readily solderable ? lead temperature for soldering purposes: 260 c (max) for 10 seconds applications ? power supply output rectification ? mobile charger ? adapter figure 1. package types of ABR1045 pdfn-56-8 to-277
data sheet low voltage advance barrier rectifier ABR1045 may 2013 rev. 1. 1 bcd semiconductor manufacturing limited 2 pin configuration dnp package vb package (pdfn-56-8) (to-277) figure 2. pin configuration of ABR1045 (top view) ordering information ABR1045 - circuit type g1: green package dnp: pdfn-56-8 tr: tape & reel vb: to-277 package part number ma rking id packing type pdfn-56-8 ABR1045dnptr-g1 a1045dnp-g1 tape & reel to-277 ABR1045vbtr-g1 a1045vb-g1 tape & reel bcd semiconductor's pb-free products, as designated with "g1" suffix in the part number, are rohs compliant and green.
data sheet low voltage advance barrier rectifier ABR1045 may 2013 rev. 1. 1 bcd semiconductor manufacturing limited 3 absolute maximum ratings (per diode leg) (note 1) note 1: stresses greater than those listed under ?absolute maximum ratings? may cause permanent damage to the device. these are stress ratings only, and functional op eration of the device at these or any other conditions beyond those indicated under ?recommended operating co nditions? is not implied. exposure to ?absolute maximum ratings? for extended periods may affect device reliability. note 2: the heat generated must be less than the thermal conductivity from junction-to-ambient: dp d /dt j < 1/ ? ja . recommended operating conditions parameter symbol condition value unit maximum thermal resistance ? ja junction to ambient pdfn-56-8 70 ? c/w to-277 electrical characteristics parameter symbol conditions value units maximum instantaneous forward voltage drop (note 3) v f i f =10a, t c =25 ? c 0.47 v i f =10a, t c =125 ? c 0.41 maximum instantaneous reverse current (note 3) i r rated dc voltage, t c =25 ? c 0.3 ma rated dc voltage, t c =100 ? c 15 note 3: pulse test: pulse width=300 ? s, duty cycle 2.0%. parameter symbol value unit peak repetitive reverse voltage working peak reverse voltage dc blocking voltage v rrm v rwm v r 45 v average rectified forward current (rated v r ) t c =tbd i f(av) 10 a non repetitive peak surge current (surge applied at rated load conditions, half wave, single phase, 60hz) i fsm 200 a operating junction temperature range (note 2) t j -65 to 150 ? c storage temperature range t stg -65 to 150 ? c voltage rate of change (rated v r ) dv/dt 10000 v/ ? s esd (machine model=3c) > 400 v esd (human body model=3b) > 8000 v
data sheet low voltage advance barrier rectifier ABR1045 may 2013 rev. 1. 1 bcd semiconductor manufacturing limited 4 typical performance characteristics 0.01 0.1 1 10 100 0 100 200 300 400 500 600 v f ,instantaneous forward voltage (mv) i f ,instantaneous forward current (a) 25 o c 100 o c 125 o c 150 o c figure 3. typical forward characteristics 0 5 10 15 20 25 30 35 40 45 50 0.01 0.1 1 10 100 i r ,reverse current (ma) v r ,reverse voltage (v) 25 o c 100 o c 125 o c 150 o c figure 4. typical reverse characteristics
data sheet low voltage advance barrier rectifier ABR1045 may 2013 rev. 1. 1 bcd semiconductor manufacturing limited 5 mechanical dimensions pdfn-56-8 unit: mm(inch) 1.200.10 4.800(0.189) 5.000(0.197) 5.100(0.201) max 1.000(0.039) 1.200(0.047) 5.700(0.224) 5.800(0.228) 0.100(0.004) max 5.900(0.232) 6.100(0.240) 0.900(0.035) 1.000(0.039) 0.510(0.020) 0.710(0.028) 0.510(0.020) 0.710(0.028) 1.170(0.046) 1.370(0.054) 3.820(0.150) 4.020(0.158) e2 1.100(0.043) min 0.350(0.014) 0.450(0.018) 0.210(0.008) 0.340(0.013) 8 12 0.060(0.002) 0.200(0.008) symbol e2 min(mm) max(mm) min(inch) max(inch) option 1 option 2 3.340 3.180 3.540 3.380 0.131 0.125 0.139 0.133 depth 0.05 +0 -0.05
data sheet low voltage advance barrier rectifier ABR1045 may 2013 rev. 1. 1 bcd semiconductor manufacturing limited 6 mechanical dimensions (continued) to-277 unit: mm(inch)
important notice bcd semiconductor manufacturing limited reserves the right to make changes without further not ice to any products or specifi- cations herein. bcd semiconductor manufacturing limited does not as sume any responsibility for us e of any its products for any particular purpose, nor does bcd semiconductor manufacturi ng limited assume any liability aris ing out of the application or use of any its products or circui ts. bcd semiconductor manufacturing limited does not convey any license under its patent rights or other rights nor the rights of others. - wafer fab shanghai sim-bcd semiconductor manufacturing co., ltd. 800 yishan road, shanghai 200233, china tel: +021-6485-1491, fa x: +86-021-5450-0008 main site regional sales office shenzhen office shanghai sim-bcd semiconductor manu facturing co., ltd., shenzhen office unit a room 1203,skyworth bldg., gaoxin ave.1.s., nanshan district shenzhen 518057, china tel: +86-0755-8660-4900, fax: +86-0755-8660-4958 taiwan office (taipei) bcd semiconductor (taiwan) company limited 3f, no.17, lane 171, sec. 2, jiu-zong rd., ne i-hu dist., taipei(114), taiwan, r.o.c tel: +886-2-2656 2808 fax: +886-2-2656-2806/26562950 taiwan office (hsinchu) bcd semiconductor (taiwan) company limited 8f, no.176, sec. 2, gong-dao 5th road, east district hsinchu city 300, taiwan, r.o.c tel: +886-3-5160181, fax: +886-3-5160181 - headquarters bcd (shanghai) micro-electronics limited no. 1600, zi xing road, shanghai zizhu scie nce-based industrial park, 200241, p. r.c. tel: +86-021-2416-2266, fax: +86-021-2416-2277 usa office bcd semiconductor corp. 48460 kato road, fremont, ca 94538, usa tel: +1-510-668-1950 fax: +1-510-668-1990 korea office bcd semiconductor limited korea office. room 101-1112, digital-empire ii, 486 sin-dong, yeongtong-gu, suwon-city, gyeonggi-do, korea tel: +82-31-695-8430 important notice bcd semiconductor manufacturing limited reserves the right to make changes without further not ice to any products or specifi- cations herein. bcd semiconductor manufacturing limited does not as sume any responsibility for us e of any its products for any particular purpose, nor does bcd semiconductor manufacturi ng limited assume any liability aris ing out of the application or use of any its products or circui ts. bcd semiconductor manufacturing limited does not convey any license under its patent rights or other rights nor the rights of others. - wafer fab shanghai sim-bcd semiconductor manufacturing limited 800, yi shan road, shanghai 200233, china tel: +86-21-6485 1491, fax: +86-21-5450 0008 bcd semiconductor manufacturing limited main site regional sales office shenzhen office shanghai sim-bcd semiconductor manuf acturing co., ltd. shenzhen office advanced analog circuits (shanghai) corporation shenzhen office room e, 5f, noble center, no.1006, 3rd fuzhong road, futian district, shenzhen 518026, china tel: +86-755-8826 7951 fax: +86-755-8826 7865 taiwan office bcd semiconductor (taiwan) company limited 4f, 298-1, rui guang road, nei-hu district, taipei, taiwan tel: +886-2-2656 2808 fax: +886-2-2656 2806 usa office bcd semiconductor corporation 30920 huntwood ave. hayward, ca 94544, u.s.a tel : +1-510-324-2988 fax: +1-510-324-2788 - ic design group advanced analog circuits (shanghai) corporation 8f, zone b, 900, yi shan road, shanghai 200233, china tel: +86-21-6495 9539, fax: +86-21-6485 9673 bcd semiconductor manufacturing limited http://www.bcdsemi.com bcd semiconductor manufacturing limited important notice bcd semiconductor manufacturing limited reserves the right to make changes without further not ice to any products or specifi- cations herein. bcd semiconductor manufacturing limited does not as sume any responsibility for us e of any its products for any particular purpose, nor does bcd semiconductor manufacturi ng limited assume any liability aris ing out of the application or use of any its products or circui ts. bcd semiconductor manufacturing limited does not convey any license under its patent rights or other rights nor the rights of others. - wafer fab shanghai sim-bcd semiconductor manufacturing co., ltd. 800 yi shan road, shanghai 200233, china tel: +86-21-6485 1491, fax: +86-21-5450 0008 main site regional sales office shenzhen office shanghai sim-bcd semiconductor manuf acturing co., ltd., shenzhen office unit a room 1203, skyworth bldg., gaoxin ave.1.s., nanshan district, shenzhen, china tel: +86-755-8826 7951 fax: +86-755-8826 7865 taiwan office bcd semiconductor (taiwan) company limited 4f, 298-1, rui guang road, nei-hu district, taipei, taiwan tel: +886-2-2656 2808 fax: +886-2-2656 2806 usa office bcd semiconductor corp. 30920 huntwood ave. hayward, ca 94544, usa tel : +1-510-324-2988 fax: +1-510-324-2788 - headquarters bcd semiconductor manufacturing limited no. 1600, zi xing road, shanghai zizhu sc ience-based industrial park, 200241, china tel: +86-21-24162266, fax: +86-21-24162277 important notice bcd semiconductor manufacturing limited reserves the right to make changes without further not ice to any products or specifi- cations herein. bcd semiconductor manufacturing limited does not as sume any responsibility for us e of any its products for any particular purpose, nor does bcd semiconductor manufacturi ng limited assume any liability aris ing out of the application or use of any its products or circui ts. bcd semiconductor manufacturing limited does not convey any license under its patent rights or other rights nor the rights of others. - wafer fab shanghai sim-bcd semiconductor manufacturing limited 800, yi shan road, shanghai 200233, china tel: +86-21-6485 1491, fax: +86-21-5450 0008 bcd semiconductor manufacturing limited main site regional sales office shenzhen office shanghai sim-bcd semiconductor manuf acturing co., ltd. shenzhen office advanced analog circuits (shanghai) corporation shenzhen office room e, 5f, noble center, no.1006, 3rd fuzhong road, futian district, shenzhen 518026, china tel: +86-755-8826 7951 fax: +86-755-8826 7865 taiwan office bcd semiconductor (taiwan) company limited 4f, 298-1, rui guang road, nei-hu district, taipei, taiwan tel: +886-2-2656 2808 fax: +886-2-2656 2806 usa office bcd semiconductor corporation 30920 huntwood ave. hayward, ca 94544, u.s.a tel : +1-510-324-2988 fax: +1-510-324-2788 - ic design group advanced analog circuits (shanghai) corporation 8f, zone b, 900, yi shan road, shanghai 200233, china tel: +86-21-6495 9539, fax: +86-21-6485 9673 bcd semiconductor manufacturing limited http://www.bcdsemi.com bcd semiconductor manufacturing limited
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